received his PhD degree in Electrical Engineering from Bilkent University, Ankara, Turkey in 2004, focusing on high-performance III-nitride optoelectronic devices. After his post-doctoral research at Virginia Commonwealth and Cornell University in the fields of III-nitride epitaxy and RF-MEMS, he joined his home institute as an assistant professor. Within 7 years, his team became one of the leading research groups in plasma-assisted atomic layer processing, with significant contributions in III-nitride material growth and templated functional nanostructures. In 2017, he joined the Electrical and Computer Engineering Department of the University of Connecticut, where he currently established and leads his Atomic Layer Engineering Laboratory. Dr. Biyikli’s research was funded by 9 external grants with more than 1.1 million USD cumulative research funding from national and international funding agencies as PI and Co-PI. Being a member of the AVS and MRS, Dr. Biyikli co-authored more than 120 peer-reviewed journal articles and 250 conference presentations. He is the recipient of 2010 Marie Curie – International Reintegration Grant Award and 2013 Parlar Foundation Research Incentive Award. Dr. Biyikli’s current research concentrates on plasma-ALD synthesis of wide and ultrawide bandgap semiconductors, phase-change compound layers, effective encapsulation materials for flexible and implantable electronics, and area-selective ALD for ultrasensitive chemical sensing.