
Plasma Processing
49th Annual SVC Technical Conference
April 2227, 2006
Marriott Wardman Park Hotel
Washington DC
Monday Morning
Plasma Processing
High-power Impulse Magnetron Sputtering
Moderator: Arutiun Ehiasarian, Sheffield Hallam University, Sheffield, United Kingdom
9:30 a.m. P-1 The High Power Impulse Magnetron Sputtering Discharge
Invited Presentation
J.T. Gudmundsson, University of Iceland, Reykjavik, Iceland
10:10 a.m. P-2 Reactive Film Growth of TiN by Using High Power Impulse Magnetron Sputtering (HIPIMS)
J. Böhlmark and H. Stranning, Linkoping University, Linkoping, Sweden; T. Selinder, AB Sandvik Tooling, Stockholm, Sweden; and M.P. Johansson, J. Carlsson, and U. Helmersson, Linkoping University, Linkoping, Sweden
10:30 a.m. P-3 High-Power Pulsed Sputtering with a Newly Designed Magnetron
J. Vlcek, P. Kudlacek, K. Burcalova, J. Lukas, and J. Musil, University of West Bohemia, Plzen, Czech Republic
10:50 a.m. P-4 Deposition of High Conductivity ITO Films by HPPMS
V. Sittinger, F. Ruske, M. Siemers, B. Szyszka, and W. Werner, Fraunhofer Institute for Surface Engineering and Thin Films IST, Braunschweig, Germany; and D. Christie, Advanced Energy Industries, Inc., Fort Collins, CO
11:10 a.m. P-5 Industrial-Scale Production of Corrosion-Resistant CrN/NbN Coatings Deposited by the Combined High Power Impulse Magnetron Sputtering Etching/Unbalanced Magnetron Sputtering Deposition (HIPIMS/UBM) Process
A.P. Ehiasarian and C. Reinhard, Sheffield Hallam University, Sheffield, United Kingdom; J.M. Colton, Zachrome Works, Chesterfield, United Kingdom; and P.E. Hovsepian, Sheffield Hallam University, Sheffield, United Kingdom
Tuesday Afternoon
Plasma Processing
Moderator: David Christie, Advanced Energy Industries, Inc., Fort Collins, CO
1:30 p.m. P-6 Plasma Processing of Nanostructures and Nanomaterials
Invited Presentation
G. Oehrlein, University of Maryland, College Park, MD
2:10 p.m. P-7 Study of Nanostructures Formation Using Scanning Probe Microscope
G. Gupta, National Institute of Technology Warangal, Warangal, India
2:30 p.m. P-8 Low-Energy Ion-Beam Etching
J. Kahn and H. Kaufman, Kaufman & Robinson, Inc., Fort Collins, CO
2:50 p.m. P-9 Electric Fields and Plasma Excitation Around an RF Powered Electrode
E.V. Barnat and G.A. Hebner, Sandia National Laboratories, Albuquerque, NM
TBD PFT-1 Diagnostics and Processing Applications of Electron Beam-Generated Plasmas Produced in Nitrogen
S.G. Walton, D. Leonhardt, and R.F. Fernsler, US Naval Research Laboratory, Washington, DC
Wednesday Morning
Plasma Processing
Moderator: Scott Walton, US Naval Research Laboratory, Washington, DC
8:30 a.m. P-10 Plasma Chemical Vapor Deposition (PCVD), Increasing Surface Energy, and Etching with the One Atmosphere Uniform Glow Discharge Plasma (OAUGDP)
Invited Presentation
J.R. Roth, T.A. Bonds, and S. Nourgostar, University of Tennessee, Knoxville, TN
9:10 a.m. P-11 Generation and Applications of the Excited Atomic Oxygen for Surface Treatment
E. Shun’ko and V. Belkin, Wintek Electro-Optics Corporation, Ann Arbor, MI
9:30 a.m. P-12 Surface Modification of Polyamide Fibers Under Atmospheric Plasma
D. Pappas, J. Robinette, W. Kosik, J. Hirvonen, D. Demaree, R. Jensen, and S. McKnight, US Army Research Laboratory, Aberdeen Proving Ground, MD
9:50 a.m. P-13 Coating with Atmospheric Pressure Plasma Processes: From Large Area to m-Structures
M. Thomas, C. Klages, and M. Eichler, Fraunhofer Institute for Surface Engineering and Thin Films IST, Braunschweig, Germany
10:30 a.m. P-14 PECVD for Dielectric Films in Electron Beam-generated Plasmas
D. Leonhardt and S. Walton, US Naval Research Laboratory, Washington, DC
10:50 a.m. P-15 Continuous Roll-to-Roll PECVD SiC Gas-Barrier Technology
L. Zambov, V. Shamamian, U. Pernisz, S. Kim, and G. Cerny, Dow Corning Corporation, Midland, MI; and J. Madocks, General Plasma, Inc., Tucson, AZ
11:10 a.m. P-16 Sputtering of Polymers in Argon-Nitrogen Mixture
Sponsored Student Presentation
J. Kousal, J. Hanus, A. Choukourov, H. Biederman, and D. Slavinska, Charles University, Prague, Czech Republic
TBD PFT-2 Smart Sputter and Etch Source Concepts for Low COO 300mm Wafer Processing
J. Weichart, Unaxis Balzers Aktiengesellschaft, Balzers, Principality of Liechtenstein