Plasma Processing

49th Annual SVC Technical Conference
April 22–27, 2006
Marriott Wardman Park Hotel
Washington DC

Technical Program
April 23–27, 2006


Monday Morning

Plasma Processing
High-power Impulse Magnetron Sputtering
Moderator: Arutiun Ehiasarian, Sheffield Hallam University, Sheffield, United Kingdom

9:30 a.m. P-1 The High Power Impulse Magnetron Sputtering Discharge
Invited Presentation
J.T. Gudmundsson, University of Iceland, Reykjavik, Iceland

10:10 a.m. P-2 Reactive Film Growth of TiN by Using High Power Impulse Magnetron Sputtering (HIPIMS)
J. Böhlmark and H. Stranning, Linkoping University, Linkoping, Sweden; T. Selinder, AB Sandvik Tooling, Stockholm, Sweden; and M.P. Johansson, J. Carlsson, and U. Helmersson, Linkoping University, Linkoping, Sweden

10:30 a.m. P-3 High-Power Pulsed Sputtering with a Newly Designed Magnetron
J. Vlcek, P. Kudlacek, K. Burcalova, J. Lukas, and J. Musil, University of West Bohemia, Plzen, Czech Republic

10:50 a.m. P-4 Deposition of High Conductivity ITO Films by HPPMS
V. Sittinger, F. Ruske, M. Siemers, B. Szyszka, and W. Werner, Fraunhofer Institute for Surface Engineering and Thin Films IST, Braunschweig, Germany; and D. Christie, Advanced Energy Industries, Inc., Fort Collins, CO

11:10 a.m. P-5 Industrial-Scale Production of Corrosion-Resistant CrN/NbN Coatings Deposited by the Combined High Power Impulse Magnetron Sputtering Etching/Unbalanced Magnetron Sputtering Deposition (HIPIMS/UBM) Process
A.P. Ehiasarian and C. Reinhard, Sheffield Hallam University, Sheffield, United Kingdom; J.M. Colton, Zachrome Works, Chesterfield, United Kingdom; and P.E. Hovsepian, Sheffield Hallam University, Sheffield, United Kingdom


Tuesday Afternoon

Plasma Processing
Moderator: David Christie, Advanced Energy Industries, Inc., Fort Collins, CO

1:30 p.m. P-6 Plasma Processing of Nanostructures and Nanomaterials
Invited Presentation
G. Oehrlein, University of Maryland, College Park, MD

2:10 p.m. P-7 Study of Nanostructures Formation Using Scanning Probe Microscope
G. Gupta, National Institute of Technology Warangal, Warangal, India

2:30 p.m. P-8 Low-Energy Ion-Beam Etching
J. Kahn and H. Kaufman, Kaufman & Robinson, Inc., Fort Collins, CO

2:50 p.m. P-9 Electric Fields and Plasma Excitation Around an RF Powered Electrode
E.V. Barnat and G.A. Hebner, Sandia National Laboratories, Albuquerque, NM

TBD PFT-1 Diagnostics and Processing Applications of Electron Beam-Generated Plasmas Produced in Nitrogen
S.G. Walton, D. Leonhardt, and R.F. Fernsler, US Naval Research Laboratory, Washington, DC


Wednesday Morning

Plasma Processing
Moderator: Scott Walton, US Naval Research Laboratory, Washington, DC

8:30 a.m. P-10 Plasma Chemical Vapor Deposition (PCVD), Increasing Surface Energy, and Etching with the One Atmosphere Uniform Glow Discharge Plasma (OAUGDP)
Invited Presentation
J.R. Roth, T.A. Bonds, and S. Nourgostar, University of Tennessee, Knoxville, TN

9:10 a.m. P-11 Generation and Applications of the Excited Atomic Oxygen for Surface Treatment
E. Shun’ko and V. Belkin, Wintek Electro-Optics Corporation, Ann Arbor, MI

9:30 a.m. P-12 Surface Modification of Polyamide Fibers Under Atmospheric Plasma
D. Pappas, J. Robinette, W. Kosik, J. Hirvonen, D. Demaree, R. Jensen, and S. McKnight, US Army Research Laboratory, Aberdeen Proving Ground, MD

9:50 a.m. P-13 Coating with Atmospheric Pressure Plasma Processes: From Large Area to m-Structures
M. Thomas, C. Klages, and M. Eichler, Fraunhofer Institute for Surface Engineering and Thin Films IST, Braunschweig, Germany

10:30 a.m. P-14 PECVD for Dielectric Films in Electron Beam-generated Plasmas
D. Leonhardt and S. Walton, US Naval Research Laboratory, Washington, DC

10:50 a.m. P-15 Continuous Roll-to-Roll PECVD SiC Gas-Barrier Technology
L. Zambov, V. Shamamian, U. Pernisz, S. Kim, and G. Cerny, Dow Corning Corporation, Midland, MI; and J. Madocks, General Plasma, Inc., Tucson, AZ

11:10 a.m. P-16 Sputtering of Polymers in Argon-Nitrogen Mixture
Sponsored Student Presentation
J. Kousal, J. Hanus, A. Choukourov, H. Biederman, and D. Slavinska, Charles University, Prague, Czech Republic

TBD PFT-2 Smart Sputter and Etch Source Concepts for Low COO 300mm Wafer Processing
J. Weichart, Unaxis Balzers Aktiengesellschaft, Balzers, Principality of Liechtenstein

Papers preceded by TBD and ending with FT, denote Guaranteed Flexible Time (FT) presentations, which will be presented in place of a cancelled paper earlier in the session if such situation arises, or will be presented at the end of the session.

Preliminary Program Index